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Articles concerning FAZIA R&D on detectors

This is the complete list of articles published by the FAZIA collaboration concerning research and development carried out on new detection technologies.

A method for non-destructive resistivity mapping in silicon detectors

Nucl. Instr. and Meth. A, 602 (2009) 501-505
It is well known that the resistivity non-uniformity of silicon detectors is a crucial parameter when pulse-shape analysis is used to identify the (...)

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A single-chip telescope for heavy-ion identification

Eur. Phys. Jour. A, (2012), 48:158
A ΔE-E telescope exploiting a single silicon chip for both ΔE measurement and scintillation light collection has been tested. It is a Si - CsI (Tl) telescope (...)

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Description of current pulses induced by heavy ions in silicon detectors

Nucl. Instr. and Meth. A 613 (2010), 290-294
The polarization of the electron-hole pairs induced by 80 MeV 12C ions in a silicon detector was considered and connected to the relative dielectric (...)

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Description of current pulses induced by heavy ions in silicon detectors (II)

NIMA, Volume 642, Issue 1, 21 June 2011, Pages 59-64
Current pulses induced in a silicon detector by 10 different heavy ion species at known energies around 10 AMeV have been sampled in time at (...)

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Effects of irradiation of energetic heavy ions on digital pulse shape analysis with silicon detectors

Nucl. Instr. and Meth. A, Volume 707, (2013) 145-152
The next generation of 4π detector arrays for heavy ion studies will largely use Pulse Shape Analysis to push the performance of silicon (...)

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Energy measurement and fragment identification using digital signals from partially depleted Si detectors

Eur. Phys. Jour. A, (2014), 50:86
A study of identification properties of a Si-Si ΔE-E telescope exploiting an underdepleted residual-energy detector has been performed. Five different bias (...)

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Influence of crystal-orientation effects on pulse-shape-based identification of heavy-ions stopped in silicon detectors

Nucl. Instr. and Meth. A 605 (2009) 353-358
Current and charge signals have been collected for Se ions at 408 MeV, S at 160 MeV and Ni at 703 MeV, all stopped in silicon detectors. Some (...)

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Low-temperature technique of thin silicon ion implanted epitaxial detectors.

European Physical Journal A, 2015, 51, pp.15. .
Eur. Phys. J. A (2015) 51: 15
A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed (...)

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