Nucl. Instr. and Meth. A 605 (2009) 353-358
Current and charge signals have been collected for Se ions at 408 MeV, S at 160 MeV and Ni at 703 MeV, all stopped in silicon detectors. Some detectors were cut 0ring operator off the image axis and some off the image axis. Important effects on the shape of the silicon current and charge signals have been observed, depending on the orientation of the impinging ion relative to the crystal axes and planes.
A degradation of the energy and risetime resolution of about a factor not, vert, similar3 with respect to the measured optimal values (for example 7ring operator off-axis orientation) is observed for ion impinging directions close to crystal axes and/or planes, i.e. the common scenario for normal incidence on 0ring operator cut detectors.
For Pulse Shape Analysis applications, the necessity of using such “random” oriented silicon detectors is demonstrated.